?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt august 2012 FGH75T65UPD 650v, 75a field stop trench igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.65v(typ.) @ i c = 75a ? high input impedance ? tightened parameter distribution ? rohs compliant ? short circuit ruggedness > 5us @25 o c general description using novel field stop trench igbt technology, fair childs new series of field stop trench igbts offer the opt imum perfor- mance for solar inverter , ups and digital power ge nerator where low conduction and switching losses are essen tial. applications ? solar inverter, ups, digital power generator absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. j unction temperature thermal characteristics symbol description ratings units v ces collector to emitter voltage 650 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 150 a collector current @ t c = 100 o c 75 a i cm (1) pulsed collector current 225 a i f diode forward current @ t c = 25 o c 75 a diode forward current @ t c = 100 o c 50 a i fm(1) pulsed diode maximum forward current 225 a p d maximum power dissipation @ t c = 25 o c 375 w maximum power dissipation @ t c = 100 o c 187 w scwt short circuit withstand time @ t c = 25 o c 5 us t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 0.40 o c / w r jc (diode) thermal resistance, junction to case - 0.86 o c / w r ja thermal resistance, junction to ambient - 40 o c / w g e c e c g collector (flange)
2 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt package marking and ordering information for fairchilds definition of green eco status, p lease visit: http://www.fairchildsemi.com/company/green/rohs_gre en.html . electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package eco status pacing type qty per tube FGH75T65UPD FGH75T65UPD to-247 - - 30ea symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 1ma 650 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma - 0.65 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 75ma, v ce = v ge 4.0 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 75a , v ge = 15v - 1.65 2.3 v i c = 75a , v ge = 15v, t c = 175 o c - 2.05 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 5665 - pf c oes output capacitance - 205 - pf c res reverse transfer capacitance - 100 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 75a, r g = 3 , v ge = 15v, inductive load, t c = 25 o c - 32 42 ns t r rise time - 43 56 ns t d(off) turn-off delay time - 166 216 ns t f fall time - 24 33 ns e on turn-on switching loss - 2.85 3.68 mj e off turn-off switching loss - 1.20 1.60 mj e ts total switching loss - 4.05 5.3 mj t d(on) turn-on delay time v cc = 400v, i c = 75a, r g = 3 , v ge = 15v, inductive load, t c = 175 o c - 30 - ns t r rise time - 57 - ns t d(off) turn-off delay time - 176 - ns t f fall time - 21 - ns e on turn-on switching loss - 4.45 - mj e off turn-off switching loss - 1.60 - mj e ts total switching loss - 6.05 - mj tsc short circuit withstand time v ge = 15v, v cc < 400v, rg = 10 5 - - us
3 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt electrical characteristics of the igbt (continued) electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max units q g total gate charge v ce = 400v, i c = 75a, v ge = 15v - 385 578 nc q ge gate to emitter charge - 45 68 nc q gc gate to collector charge - 210 315 nc symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 50a t c = 25 o c - 2.1 2.6 v t c = 175 o c - 1.7 - e rec reverse recovery energy i f =50a, di f /dt = 200a/ s t c = 175 o c - 40 - uj t rr diode reverse recovery time t c = 25 o c - 65 85 ns t c = 175 o c - 127 - q rr diode reverse recovery charge t c = 25 o c - 120 170 nc t c = 175 o c - 550 -
4 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current leve l 0 2 4 6 8 10 0 45 90 135 180 225 8v v ge = 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 0 45 90 135 180 225 8v v ge = 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 3 6 9 12 15 0 45 90 135 180 225 common emitter v ce = 400v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0 1 2 3 4 5 0 25 50 75 100 125 150 175 200 225 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 40a 150a 75a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 75a 150a i c = 40a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c]
5 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation volt age vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristi cs vs. gate resistance 4 8 12 16 20 0 4 8 12 16 20 i c = 40a 150a 75a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 40a 150a 75a common emitter t c = 175 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0 70 140 210 280 350 420 0 3 6 9 12 15 200v common emitter t c = 25 o c v cc = 300v 400v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 50 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 10 20 30 40 50 10 100 1000 switching time [ns] common emitter v cc = 400v, v ge = 15v i c = 75a t c = 25 o c t c = 175 o c t d(on) t r gate resistance, r g [ ? ] 1 10 100 1000 0.1 1 10 100 500 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j < 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics v s. gate resistance coll ector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 10 20 30 40 50 10 100 1000 5000 switching time [ns] common emitter v cc = 400v, v ge = 15v i c = 75a t c = 25 o c t c = 175 o c t d(off) t f gate resistance, r g [ ? ] 0 30 60 90 120 150 1 10 100 500 common emitter v ge = 15v, r g = 3 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 0 30 60 90 120 150 1 10 100 1000 common emitter v ge = 15v, r g = 3 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 75a t c = 25 o c t c = 175 o c e off e on switching loss [mj] gate resistance, r g [ ? ] 0 30 60 90 120 150 0.1 1 10 50 common emitter v ge = 15v, r g = 3 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 0 100 200 300 400 500 600 700 0 50 100 150 200 250 safe operating area v ge = 15v, t c < 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
7 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt typical performance characteristics figure 19. current derating figure 20. load current v s. frequence figure 21. forward characteristics figure 22. reverse recovery curr ent figure 23. stored charge figure 24. reverse reco very time 0 25 50 75 100 125 150 175 200 0 30 60 90 120 150 180 average forward current, i f(av) [a] case temperature, t c [ o c] 1k 10k 100k 1m 0 30 60 90 120 150 180 duty cycle : 50% t c = 100 o c power dissipation = 187w v cc = 400v load current : peak of square wave t c = 100 o c collector current, i c a] switching frequency, f [hz] 0 1 2 3 4 1 10 100 300 t c = 175 o c t c = 75 o c t c = 25 o c t c = 125 o c forward voltage, v f [v] forward current, i f [a] 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 11 t c = 25 o c t c = 175 o c di/dt = 200a/ ? s 100a/ ? s di/dt = 200a/ ? s 100a/ ? s reverse current i rr [a] ic [a] 0 20 40 60 80 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 200a/ ? s 200a/ ? s di/dt = 100a/ ? s di/dt = 100a/ ? s t c = 25 o c t c = 175 o c stored recovery charge, q rr [uc] forwad current, i f [a] 0 20 40 60 80 40 80 120 160 200 t c = 25 o c t c = 175 o c di/dt = 100a/ ? s 200a/ ? s di/dt = 100a/ ? s 200a/ ? s reverse recovery time, t rr [ns] forward current, i f [a]
8 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt typical performance characteristics fig ure 25. transient thermal impedance of igbt figure 26.transient thermal impedance of diode 1e-5 1e-4 1e-3 0.01 0.1 1e-3 0.01 0.1 0.5 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
9 www.fairchildsemi.com FGH75T65UPD rev. c0 FGH75T65UPD 650v 75a field stop igbt mechanical dimensions to - 247ab (fks pkg code 001)
FGH75T65UPD 650v 75a field stop igbt FGH75T65UPD rev. c0 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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